Skip to main content

Micro-electro-mechanical systems fast fabrication by selective thick polysilicon growth in epitaxial reactor


A thick layer selective polysilicon growth technique has been developed for micro-electro-mechanical systems (MEMS) fabrication. It allows fast MEMS fabrication without using silicon on insulator wafers or deep ICPRIE etching. The fabrication technique is based on two main steps: a first seed layer of polysilicon is deposited and patterned; the second step consists in the selective growth of this layer in an epitaxial reactor. The first part of this work is devoted to the optimisation of growth parameters. Afterwards, this technique is applied for fabrication of different kinds of actuators, involving films several microns thick with good mechanical properties such as a low mechanical stress and a low roughness of the polysilicon film surface. Furthermore, thermal actuator prototypes were fabricated by using this technique;showing good mechanical properties and high reliability.

This is a preview of subscription content, access via your institution.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8
Fig. 9
Fig. 10
Fig. 11
Fig. 12
Fig. 13


  1. Agarwal A, Nagarajan R, Singh J (2002) A process technique to engineer the stress of thick doped polysilicon films for MEMS applications. In: Proceedings of 9th IPFA, Singapore

  2. Lee B-L, Oh C-H, Lee S, Oh Y-S, Chun K (2000) A vacuum packaged differential resonant accelerometer using electrostatic stiffness changing effect. In: 13th IEEE international conference on micro electro mechanical system, Miyazaki, pp 352–357

  3. Denoual M, De Sagazan O (2004) In: Proceedings of the actuator, 9th international conference on new actuators, Bremen, pp 529–532

  4. Galayko D, Kaiser A, Legrand B, Collard D, Buchaillot L, Combi C (2002) High-frequency high-Q micromechanical resonator in thick EPIPOLY technology with post-process gap adjustment. In: Proceeding MEMS, IEEE, pp 665–668

  5. Geiger W, Folkmer B, Merz J, Sandmaier H, Lang W (1999) A new silicon rate gyroscope. Sens Actuators 73:45–51

    Article  Google Scholar 

  6. Regolini JL, Bensahel D, Sheid E, Mercier J (1989) Selective epitaxial silicon growth in the 650–1100°C range in a reduced pressure chemical vapour deposition reactor using dichlorosilane. Appl Phys Lett 54(7):658–659

    Article  Google Scholar 

  7. Sedgwick TO, Berkenblit M, Kuan TS (1989) Low-temperature selective epitaxial growth of silicon at atmospherical pressure. Appl Phys Lett 54 (26), 26 June 1989

    Google Scholar 

Download references

Author information



Corresponding author

Correspondence to O. De Sagazan.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

De Sagazan, O., Denoual, M., Guil, P. et al. Micro-electro-mechanical systems fast fabrication by selective thick polysilicon growth in epitaxial reactor. Microsyst Technol 12, 953–958 (2006).

Download citation


  • Polysilicon
  • Seed Layer
  • Chemical Mechanical Polishing
  • Selective Growth
  • Thermal Actuator