Abstract
A specially designed microtensile apparatus capable of carrying out a series of tests on microscale thin films for microelectromechanical system (MEMS) applications at room temperature and at temperature up to 400°C has been developed and tested, and is described here. Several MEMS-applicable thin films were measured with it, including thermally grown silicon dioxide, gold, and gold–vanadium. The silicon dioxide was tested at room temperature. Gold and gold–vanadium films were tested at room temperature and at 200 and 400°C. Examples of these results are presented.
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Acknowledgements
The authors are grateful to Prof. Ralph J. Jaccodine of Lehigh University for his kind advice and to the faculty and staff of the Sherman Fairchild Laboratory for Solid State Studies, Lehigh University, for their help in sample preparation. This work was performed in Lehigh University, supported by the United States National Science Foundation, CAREER DMR-9876261, and the US Army Research Office through grant DAAD19-01-1-0662. The views and conclusion contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the Army Research Office, Army Research Laboratory, or the US Government. The original results were reported at the DTIP conference in 2005.
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Lin, MT., El-Deiry, P., Chromik, R.R. et al. Temperature-dependent microtensile testing of thin film materials for application to microelectromechanical system. Microsyst Technol 12, 1045–1051 (2006). https://doi.org/10.1007/s00542-006-0129-8
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DOI: https://doi.org/10.1007/s00542-006-0129-8