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Effect of interfacial SiO2 thickness for low temperature O2 plasma activated wafer bonding

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Abstract

It was experimentally demonstrated that bonding strength strongly depends on the total SiO2 thickness near the bonding interface for a given O2 plasma surface activation. Systematic experiments of Si/SiO2 and SiO2/SiO2 wafer bonding are performed for analyzing the evolution of the bonding surface energy with the interfacial oxide thickness. Optimum plasma exposure time increases with the interfacial SiO2 thickness to achieve the maximum bonding strength in SiO2/SiO2 or SiO2/Si. An optimal process option for plasma activated SiO2/SiO2 wafer bonding is proposed.

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Authors and Affiliations

  1. Microwave Laboratory, Research Center in Micro and Nanoscopic Materials and Electronic Devices, Université catholique de Louvain, Place du Levant, 3, 1348, Louvain-la-Neuve, Belgium

    Benoit Olbrechts, Xuanxiong Zhang, Yannick Bertholet, Thomas Pardoen & Jean-Pierre Raskin

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  1. Benoit Olbrechts
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  2. Xuanxiong Zhang
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  3. Yannick Bertholet
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  4. Thomas Pardoen
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  5. Jean-Pierre Raskin
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Correspondence to Benoit Olbrechts.

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Olbrechts, B., Zhang, X., Bertholet, Y. et al. Effect of interfacial SiO2 thickness for low temperature O2 plasma activated wafer bonding. Microsyst Technol 12, 383–390 (2006). https://doi.org/10.1007/s00542-005-0038-2

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  • DOI: https://doi.org/10.1007/s00542-005-0038-2

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