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Combination of thick resist and electroforming technologies for monolithic inkjet application

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Abstract

This paper reports a novel method for fabricating a monolithic inkjet chip by combination of thick resist photolithography and electroforming technologies. It integrates two-step photolithography process by two kinds of thick photoresists, SU-8 and JSR, and one-step nickel electroplating process to form the channels, chambers and nozzles of monolithic inkjet chip. The nickel nozzle plate can be replaced by SU8 material as second thick SU8 resist is used. The first thick resist of SU8 for both kinds of nozzle plates, nickel and SU8, is used for the structure formation of ink channel and chamber. Followed the nickel or SU8 nozzle plates are fabricated on SU8 chambers. The nickel nozzle plate is performed by second thick resist JSR and electroforming process while the SU8 nozzle plate is only by second thick SU8 resist process. A light-absorbing polymer layer is coated between two thick resist layers for protecting the first SU8 layer from overheating during the metal seed layer deposition or over-exposure during the second thick resist lithography process. A prototype of monolithic inkjet chip with a 300 dpi resolution has been successfully demonstrated.

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Correspondence to C. K. Chung.

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This work is partially sponsored by National Science Council under contract No NSC 92-2212-E-006-125 and Industrial Technology Research Institute (ITRI) under contract No 03921012 in addition to MOEA 92-EC-2-A-17-0448. We pay our sincere thanks to the Southern Regional MEMS Center in National Cheng Kung University and Common Laboratory of the Microsystems Technology Center of Electronic Research Service Organization in Industrial Technology Research Institute for the access of process equipments. We also thank Mr. L.H. Wu for his technical assistant on the SEM instrument.

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Chung, C., Lin, C., Chen, C. et al. Combination of thick resist and electroforming technologies for monolithic inkjet application. Microsystem Technologies 10, 462–466 (2004). https://doi.org/10.1007/s00542-004-0371-x

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  • DOI: https://doi.org/10.1007/s00542-004-0371-x

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