Abstract
The deposition of diamond films on silicon substrate by MWPECVD is described and microstructural characteristics of the obtained films are reported. The resistive and piezoresistive properties of the diamond-on-silicon films have been measured beyond 200 °C by means of a purposely developed apparatus, and experimental results are reported. The piezoresistive properties at high temperature are exploited in the development of a micromachined pressure sensor capable of operating at up to 350–380 °C. A dedicated signal-conditioning electronic circuit is being designed and its functioning principle is here described.
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This work was funded by the Italian National Research Council under the project MADESS.
This paper was presented at the Conference of Micro System Technologies 2001 in March 2001.
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Crescini, D., Ferrari, V., Vajna, Z. et al. Design and development of a piezoresistive pressure sensor on micromachined silicon for high-temperature applications and of a signal-conditioning electronic circuit. Microsystem Technologies 9, 431–435 (2003). https://doi.org/10.1007/s00542-002-0288-1
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DOI: https://doi.org/10.1007/s00542-002-0288-1