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Side wall roughness in ultradeep X-ray lithography

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Abstract

 An experimental characterization of the roughness of side walls in ultradeep, hard X-ray lithography was performed. Several sources of roughness were distinguished: the roughness of the absorber layer on the mask, the roughness of the mask substrate, nonhomogeneities in the X-ray beam, incomplete developing, cracks generated in the PMMA, and the thermal treatment of PMMA. The intrinsic roughness of the correctly developed PMMA was estimated to about 4 nm rms. The best results showed an anisotropy of roughness with minimal values of 4 nm rms along the Oz direction (parallel with the X-ray beam) and 25 nm rms in the Ox direction.

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Authors and Affiliations

  1. Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, USA, , , , , , US

    N. Moldovan, D. C. Mancini, R. Divan & K. R. Podolak

  2. Creatv MicroTech, Inc. Potomac, MD 20854, USA, , , , , , US

    O. V. Makarova

  3. School of Physics, University of Melbourne, Parkville 3010, Australia, , , , , , AU

    A. Peele

Authors
  1. N. Moldovan
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  2. D. C. Mancini
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  3. R. Divan
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  4. O. V. Makarova
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  5. A. Peele
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  6. K. R. Podolak
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Additional information

Received: 10 August 2001/Accepted: 24 September 2001

This work is supported by the U.S. Department of Energy, Office of Science, under Contract No. W-31-109-ENG-38.

This paper was presented at the Fourth International Workshop on High Aspect Ratio Microstructure Technology HARMST 2001 in June 2001.

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Moldovan, N., Mancini, D., Divan, R. et al. Side wall roughness in ultradeep X-ray lithography. Microsystem Technologies 9, 130–132 (2002). https://doi.org/10.1007/s00542-002-0218-2

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  • DOI: https://doi.org/10.1007/s00542-002-0218-2

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