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Electromechanical fields in PN junctions with continuously graded doping in piezoelectric semiconductor rods

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Abstract

We study PN junctions in a piezoelectric semiconductor rod with continuously graded doping. The macroscopic theory of piezoelectric semiconductor is used. The doping profile is describes by power series in a general manner. The resulting differential equation is also solved by power series. Electromechanical fields produced by doping described by the error function are calculated numerically as an example. Numerical results show the diffusion of carriers and the formation of PN junctions. The effective polarization charge, the built-in electric field and potential, and the strain and mechanical displacement are also calculated.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 12072167, 11672141, 11972199, and 11672142), the Y. K. Pao Visiting Professorship at Ningbo University, the special research funding from the Marine Biotechnology and Marine Engineering Discipline Group in Ningbo University, and the K. C. Wong Magana Fund through Ningbo University.

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Authors and Affiliations

  1. Smart Materials and Advanced Structure Laboratory, School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo, 315211, Zhejiang, China

    Guangying Yang, Jianke Du & Ji Wang

  2. Department of Mechanical and Materials Engineering, The University of Nebraska-Lincoln, Lincoln, NE, 68588-0526, USA

    Jiashi Yang

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  1. Guangying Yang
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Correspondence to Jianke Du.

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Yang, G., Du, J., Wang, J. et al. Electromechanical fields in PN junctions with continuously graded doping in piezoelectric semiconductor rods. Arch Appl Mech 92, 325–333 (2022). https://doi.org/10.1007/s00419-021-02059-0

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