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Spin-dependent internal photo-electron emission over metal–semiconductor junctions – a study with circularly polarised infrared radiation

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Abstract.

The spin asymmetry of internal photo-electron emission over Schottky barriers has been investigated for Fe/GaAs (001) having close-to-ideal current–voltage characteristics. Using a low-power circularly polarised YAG laser operated at its fundamental frequency (λ=1064 nm) as well as a visible diode laser (λ=670 nm) we demonstrate that, by eliminating the photo-current due to inter-band transitions in GaAs with the infrared source, a significant enhancement to the magnetic asymmetry could be achieved. The bias dependence of the asymmetry was also measured. It was found that the values were considerably different for the photo-electrons traversing the barriers in opposite directions.

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Authors and Affiliations

  1. Joule Physics Laboratory, Institute for Materials Research, University of Salford, Salford, M5 4WT, UK, GB

    A.E.R. Malins, J.R. Neal & T.-H. Shen

  2. Cavendish Laboratory, Madingley Road, Cambridge, CB3 0HE, UK, GB

    W.Y. Liang

Authors
  1. A.E.R. Malins
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  2. J.R. Neal
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  3. T.-H. Shen
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  4. W.Y. Liang
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Received: 15 November 2001 / Revised version: 23 March 2002 / Published online: 2 May 2002

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Malins, A., Neal, J., Shen, TH. et al. Spin-dependent internal photo-electron emission over metal–semiconductor junctions – a study with circularly polarised infrared radiation . Appl Phys B 74, 729–733 (2002). https://doi.org/10.1007/s003400200856

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  • DOI: https://doi.org/10.1007/s003400200856

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