Abstract.
Transients of the photoluminescence (1.54 μm) of Er3+ ions embedded in an amorphous silicon matrix excited with intensive laser pulses are simulated using a phenomenological model which takes into account both the defect-related excitation mechanism and stimulated optical transitions in the ions. The simulated transients are compared with the experimental ones observed in Er-doped amorphous silicon layers under pulsed laser excitation. The modeling and the experimental results demonstrate a possibility to realize a regime of superradiance in the system of Er3+ ions pumped via an electronic excitation of the amorphous matrix.
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Received: 7 August 2001 / Revised version: 1 November 2001 / Published online: 17 January 2002
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Kamenev, B., Emel’yanov, V., Konstantinova, E. et al. Photoluminescence of Er3+ ions in amorphous silicon layers under intensive laser excitation . Appl Phys B 74, 151–154 (2002). https://doi.org/10.1007/s003400100778
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DOI: https://doi.org/10.1007/s003400100778