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Electric-field enhancement of beam coupling in Sn2P2S6

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Abstract.

The influence of an external field on photorefractive recording in Sn2P2S6 (SPS) crystals is studied. A large gain factor of more then 15 cm-1 is achieved for a grating spacing of 12 μm at λ=0.9 μm. For an applied field exceeding ±200 V/cm a switching of the beam coupling direction is detected, exhibiting a pronounced hysteresis.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences, 03650, Kiev-39, Ukraine (Fax: +380-44/265-2359, E-mail: shumeluk@iop.kiev.ua), UA

    A. Shumelyuk & S. Odoulov

  2. Fachbereich Physik, Universität Osnabrück, Barbarastrasse 7, 49069 Osnabrück, Germany (Fax: +49-541/969-3510), DE

    D. Kip & E. Krätzig

Authors
  1. A. Shumelyuk
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  2. S. Odoulov
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  3. D. Kip
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  4. E. Krätzig
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Received: 25 October 2000 / Revised version: 18 January 2001 / Published online: 21 March 2001

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Shumelyuk, A., Odoulov, S., Kip, D. et al. Electric-field enhancement of beam coupling in Sn2P2S6. Appl Phys B 72, 707–710 (2001). https://doi.org/10.1007/s003400100556

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  • DOI: https://doi.org/10.1007/s003400100556

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