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Infrared phase-conjugate reflection by hot electron-induced optical nonlinearity in n-Ge

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Abstract.

We have studied backward-degenerate four-wave mixing at CO2 laser wavelengths in n-type Ge having a free electron density of N=5×1016 cm-3. The phase conjugation due to the redistribution of free electrons between the equivalent valleys was observed. The effect occurs only when the electric field E of the light wave is aligned nonsymmetrically relative to the long axes of the valleys in the crystal, and is related to carrier heating by the infrared radiation.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Ukraine, 46, Prospect Nauky, Kyiv-39, 03650, Ukraine (Fax: +38-044-265-15-89, E-mail: poroshin@iop.kiev.ua), , , , , , UA

    V.N. Poroshin & V.M. Vasetskii

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  1. V.N. Poroshin
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  2. V.M. Vasetskii
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Received: 11 April 2000 / Revised version: 13 September 2000 / Published online: 10 January 2001

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Poroshin, V., Vasetskii, V. Infrared phase-conjugate reflection by hot electron-induced optical nonlinearity in n-Ge . Appl Phys B 72, 323–325 (2001). https://doi.org/10.1007/s003400100489

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  • DOI: https://doi.org/10.1007/s003400100489

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