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Diode-pumped erbium-ytterbium-glass laser passively Q-switched with a PbS semiconductor quantum-dot doped glass

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An Erratum to this article was published on 07 February 2002

Abstract.

Q-switched and cw operation of different diode-pumped erbium-ytterbium doped glasses at 1.5 μm has been studied in a compact microlaser setup. For Q-switching we used a novel PbS semiconductor quantum-dot doped glass which offers low saturation intensity compared with typical absorbers used and a fast time response. The cw laser delivered output powers of 35 mW with slope efficiencies of 16%. In Q-switched operation pulse energies of 1 μJ at repetition rates of 1–2 kHz and pulse durations of about 30–50 ns, depending on absorber thickness were obtained.

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Received: 5 June 2000 / Revised version: 29 June 2000 / Published online: 13 September 2000

An erratum to this article is available at http://dx.doi.org/10.1007/s003400100687.

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Philipps, J., Töpfer, T., Ebendorff-Heidepriem, H. et al. Diode-pumped erbium-ytterbium-glass laser passively Q-switched with a PbS semiconductor quantum-dot doped glass . Appl Phys B 72, 175–178 (2001). https://doi.org/10.1007/s003400000415

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  • DOI: https://doi.org/10.1007/s003400000415

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