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Optical confinement enhancement of AlGaN-based deep-ultraviolet laser diode by using asymmetrically wide waveguide layers

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Abstract

The performance of AlGaN-based deep-ultraviolet (DUV) laser diodes (LDs) was investigated by varying the thickness of the upper and lower waveguide (WG) layers. The results show that (1) the asymmetric wide WG layers structure with thick upper and thin lower WG layer can effectively reduce the optical field leakage in the active region and increase the optical confinement factor (OCF) by 31.66% compared to the traditional symmetric wide WG layers structure. (2) The asymmetric wide WG layers improve the stimulated recombination rate, and electro-optical conversion efficiency, increasing the slope efficiency (SE) of the LD to 1.69 W/A at a lower threshold current (Ith) of 30.46 mA. (3) The asymmetric wide WG layers limit the carrier loss, which is due to the improvement of the energy band variation.

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The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

Supported by the National Nature Science Foundation of China (Grant No. 62174148), National Key Research and Development Program (NKRDP Grant No. 2022YFE0112000, Grant No. 2016YFE0118400), Zhengzhou 1125 Innovation Project (Grant No. ZZ2018-45), and Ningbo 2025 Key Innovation Project (Grant No. 2019B10129).

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Authors and Affiliations

  1. National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, 450001, Henan, People’s Republic of China

    Yuan Xu, Liya Jia, Linfu Liu, Xien Sang, Fang Wang, Juin. J. Liou & Yuhuai Liu

  2. Institute of Intelligence Sensing, Zhengzhou University, Zhengzhou, 450001, Henan, People’s Republic of China

    Fang Wang, Juin. J. Liou & Yuhuai Liu

  3. Research Institute of Industrial Technology Co. Ltd., Zhengzhou University, Zhengzhou, 450001, Henan, People’s Republic of China

    Fang Wang & Yuhuai Liu

  4. Zhengzhou Way Do Electronics Co. Ltd., Zhengzhou, 450001, Henan, People’s Republic of China

    Fang Wang, Juin. J. Liou & Yuhuai Liu

Authors
  1. Yuan Xu
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  2. Liya Jia
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  3. Linfu Liu
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  5. Fang Wang
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  6. Juin. J. Liou
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  7. Yuhuai Liu
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Contributions

YX: Conceptualization, Methodology, Software, Investigation, Writing—original draft, Writing—review & editing. LJ: Software, Writing—review & editing, Validation. LL: Investigation, Validation. XS: Software, Resources. FW: Supervision, Project administration, Funding acquisition. JJL: Supervision, Project administration. YL: Supervision, Project administration, Funding acquisition, Writing—review & editing, Validation, Resources.

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Correspondence to Fang Wang or Yuhuai Liu.

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Xu, Y., Jia, L., Liu, L. et al. Optical confinement enhancement of AlGaN-based deep-ultraviolet laser diode by using asymmetrically wide waveguide layers. Appl. Phys. B 129, 145 (2023). https://doi.org/10.1007/s00340-023-08088-7

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