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Effects of base and quantum wells widths variations on technical characteristics of tunneling injection transistor laser

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Abstract

In this paper, we use an analytical model to investigate the optoelectronic characteristics of a double quantum well vertical cavity tunneling injection transistor laser. We particularly study device performances as a function of different tunneling probabilities as well as device structural factors including base width and quantum well location. Different confinement structures are analyzed to achieve higher optoelectronic figure of merits. The tunneling injection is denoted by a factor of ‘f,’ and it is varied between zero to one. By changing ‘f,’ modulation bandwidth and current gain which are the foremost features of transistor lasers are increased, while the threshold current is decreased. We have studied two various tunneling injection-based structures. Slipping the quantum well(s) toward the emitter improves the optical bandwidth to a maximum of 28.5 GHz, while the current gain \(\left( \beta \right)\) decreases, so there is a trade-off between the optical and electrical properties of transistor laser. Our analysis of these structures anticipates a profound reduction of 45% in the threshold current compared to the previously reported results, while the modulation bandwidth is kept constant.

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Authors and Affiliations

  1. Photonics Research Laboratory (PRL), Electrical Engineering Department, AmirKabir University of Technology, Hafez Avenue #424, Tehran, 15914, Iran

    Ghazaleh Nourbakhsh, Hassan Kaatuzian & Behzad Namvar

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  1. Ghazaleh Nourbakhsh
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Contributions

Gh. Nourbakhsh, H. Kaatuzian, and B. Namvar wrote the main manuscript text. Gh. Nourbakhsh and B. Namvar prepared the figures and tables. All authors reviewed the manuscript.

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Correspondence to Ghazaleh Nourbakhsh.

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Nourbakhsh, G., Kaatuzian, H. & Namvar, B. Effects of base and quantum wells widths variations on technical characteristics of tunneling injection transistor laser. Appl. Phys. B 129, 132 (2023). https://doi.org/10.1007/s00340-023-08076-x

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