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Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate

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Abstract

To meet the increasing demand of short-wavelength red lasers for laser display technology and medical applications, we propose a new short-wavelength red semiconductor laser structure. The laser uses Ge/SiGe as the substrate and GaInP, AlInP and other group III-V materials as the main structural layers. The composition of Ge is adjusted to change the lattice constant of the SiGe layer according to the needs of GaInP strain quantum well design to achieve a short-wavelength red laser. A semiconductor laser with a wavelength of 620 nm is used as an example, and the effect of both the interfacial state and the GaInP-strained quantum well on the device characteristics is discussed through simulation. It is found that the laser structure has the optimal output characteristics when the quantum well is subjected to 0.32% compressive strain under the conditions of the interfacial state, which indicates the feasibility of this laser structure design scheme.

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The datasets generated during and/or analysed during the current study are available from the corresponding author on reasonable request.

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Acknowledgements

This work was supported by the scientific research program funded by Shaanxi provincial education department (No. 22JP051), key research and development projects in Shaanxi province (No. 2020GY-044) and the Xi'an Science and technology plan project (No. 2020KJRC0077). Thanks to Synopsys for providing the trial version of RSoft simulation tool.

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Authors and Affiliations

  1. College of Automation and Information Engineering, Xi’an University of Technology, Xi’an, 710048, China

    Jianan Xie, Tao Lin, Cailin Wang, Jiahao Shi & Chaoyang Xie

  2. Shannxi Key Laboratory of Complex System Control and Intelligent Information Processing, Xi’an University of Technology, Xi’an, China

    Tao Lin

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  1. Jianan Xie
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Contributions

Jianan Xie wrote the manuscript and prepared the figures, while Tao Lin proposed the device design and gave comments on the manuscript. Cailin Wang directs responses to reviewers' suggestions. Jiahao Shi and Chaoyang Xie check the revised manuscript for typographical problems. All authors reviewed the manuscript.

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Correspondence to Tao Lin.

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Xie, J., Lin, T., Wang, C. et al. Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate. Appl. Phys. B 129, 48 (2023). https://doi.org/10.1007/s00340-023-07992-2

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