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Design of high-performance double quantum well vertical cavity transistor lasers with GRIN base region

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Abstract

Different confinement structures are analyzed to achieve higher optoelectronic performances for double quantum well vertical cavity transistor laser with graded index separate confinement heterostructure. Adding the drift component to the diffusion term of the current density and solving new sets of equations, modified electro-optic performances of the device is obtained. Band-gap engineering of the original structure predicts simultaneous improvements in both current gain (more than two times) and −3 dB optical bandwidth (by 1.5 GHz). Other less critical, yet important, performance metrics including optical output power and threshold current (up to 20%) are enhanced due to applying graded layers of AlξGa1-ξAs in the base region.

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Authors and Affiliations

  1. Photonics Research Lab (PRL), Electrical Engineering Department, Amirkabir University of Technology, Tehran, Iran

    Behzad Namvar, Mohammad Hosseini & Hassan Kaatuzian

  2. Electrical and Computer Engineering Department, Georgia Institute of Technology, Atlanta, GA, USA

    Iman Taghavi

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  1. Behzad Namvar
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  2. Mohammad Hosseini
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  3. Hassan Kaatuzian
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  4. Iman Taghavi
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Correspondence to Hassan Kaatuzian.

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Namvar, B., Hosseini, M., Kaatuzian, H. et al. Design of high-performance double quantum well vertical cavity transistor lasers with GRIN base region. Appl. Phys. B 125, 207 (2019). https://doi.org/10.1007/s00340-019-7322-9

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