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Transient reflectivity measurement of photocarrier dynamics in GaSe thin films

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Abstract

We report a spatially, temporally, and spectrally resolved transient reflectivity measurement on photocarrier lifetime and diffusion in GaSe. We directly obtain a carrier lifetime of about 260 ps and a diffusion coefficient of about 5.5 cm2 s−1, both at room temperature. From these quantities, we further deduce a mean free time of about 90 fs, a mean free path of about 6 nm, a diffusion length of about 360 nm, and a mobility of about 190 cm2 V−1 s−1. These results provide fundamental information for understanding carrier dynamics in this material and its applications in electronics and optoelectronics.

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Acknowledgements

This work is financially supported by the Key Laboratory of Luminescence and Optical Information of China in Beijing Jiaotong University with financial aid from the Natural National Science Foundation of China (Grant Nos. 61275058, 61527817, 61335006, 61378073), the National Basic Research Program (Grant Nos. 2016YFA0202300, 2016YFA0202302) and the Beijing Science and Technology Committee (Grant No. Z151100003315006).

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  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, 100044, Beijing, China

    Xinwu Zhang, Shenwei Wang, Guangmiao Wan, Yanwei Zhang, Miaoling Huang & Lixin Yi

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  1. Xinwu Zhang
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Zhang, X., Wang, S., Wan, G. et al. Transient reflectivity measurement of photocarrier dynamics in GaSe thin films. Appl. Phys. B 123, 86 (2017). https://doi.org/10.1007/s00340-017-6677-z

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