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Influence of heat transfer on nodule height of microstructured silicon fabricated by femtosecond laser pulses

Applied Physics B volume 118, pages 327–331 (2015)Cite this article

Abstract

By experiments and theory, we investigate the influence of heat transfer across a gas–solid interface on the nodule height of microstructured silicon fabricated under femtosecond laser pulses. By changing the pressure of the vacuum system, a fast-changing spread in height is found. This is determined by the different heat-transfer flux across the gas–solid interface for different Knudsen-number regimes. Heat transfer affects the energy remaining in the bulk silicon, which determines nodule formation and corresponding height. The rate of change in the heat-transfer flux induces a negative rate of change in the nodule height. These results are important when optimizing the surface microstructure for silicon-based photoelectron devices.

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Acknowledgments

This work was partly supported by National Natural Science Foundation of China (11104186, 61138001), Program of Shanghai Subject Chief Scientist (14XD1403000), Shanghai Basic Research Key Project (12JC1407100), “Chen Guang” Project of Shanghai Municipal Education Commission and Educational Development Foundation (12CG54), and State Scholarship Fund (201308310172).

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Authors and Affiliations

  1. Shanghai Key Lab of Modern Optical System, Engineering Research Center of Optical Instrument and System Ministry of Education, University of Shanghai for Science and Technology, No. 516 JunGong Rd., Shanghai, 200093, China

    Yan Peng, XiangQian Chen, YunYan Zhou, Kun Luo & YiMing Zhu

  2. The Institute of Optics, University of Rochester, Rochester, NY, 14627, USA

    Yan Peng

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  1. Yan Peng
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  2. XiangQian Chen
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  3. YunYan Zhou
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  4. Kun Luo
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  5. YiMing Zhu
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Correspondence to YiMing Zhu.

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Peng, Y., Chen, X., Zhou, Y. et al. Influence of heat transfer on nodule height of microstructured silicon fabricated by femtosecond laser pulses. Appl. Phys. B 118, 327–331 (2015). https://doi.org/10.1007/s00340-014-5994-8

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  • DOI: https://doi.org/10.1007/s00340-014-5994-8

Keywords

  • Heat Transfer
  • Silicon Surface
  • Nodule Formation
  • Vacuum Pressure
  • Solid Interface