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Design and fabrication of highly dispersive semiconductor double-chirped mirrors

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We report on the development of semiconductor double-chirped mirrors with the group delay dispersion of −3,800 ± 100 fs2 in the wavelength range between 1,058 ÷ 1,064 nm and reflectivity of 99.1 %. The simplified plane-wave reflection transfer method was used to design the mirror multilayer stack. The mirror contains an epitaxial AlAs/GaAs structure topped with a SiNx antireflective layer.

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This work was partially supported by the National Centre for Research and Development (NCBiR) under project 02-0009-10/2011, the National Science Centre (NCN) under project 3606/B/T02/2009/36, and by the ERDF within the POIG.02.01.00-14-122/09.

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Correspondence to Agata Jasik.

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Jasik, A., Dems, M., Wnuk, P. et al. Design and fabrication of highly dispersive semiconductor double-chirped mirrors. Appl. Phys. B 116, 141–146 (2014).

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