Applied Physics B

, Volume 114, Issue 4, pp 551–555 | Cite as

Optical excitation study on the efficiency droop behaviors of InGaN/GaN multiple-quantum-well structures

  • Yuanping Sun
  • Hongying Guo
  • Lihua Jin
  • Yong-Hoon Cho
  • E.-K. Suh
  • H. J. Lee
  • R. J. Choi
  • Y. B. Hahn


Efficiency droop is generally observed in electroluminescence under high current injection. Optical characterization on efficiency droop in InGaN/GaN multiple-quantum-well structures has been conducted at 12 K. Clear droop behaviors were observed for the sample excited by above-bandgap excitation of GaN with pulse laser. The results show that dislocation is not the crucial factor to droop under high carrier density injection, and Auger recombination just slightly affects the efficiency. The radiative recombination may be mainly affected by a multi-carrier-related process (diffusion and drift with a factor of n 3.5 and n 5.5) at the interface between GaN barrier and InGaN well.


Radiative Recombination Excitation Power Nonradiative Recombination Auger Recombination Internal Electric Field 
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This work is supported by the National Natural Science Foundation of China (Grant number: 11174241), Natural Science Foundation of Shandong Province (No. 2009VRA06063), and the Natural Science Foundation for Distinguished Young Scholars of Shandong province (No. 2008JQB01028). The work at KAIST was supported by the WCU Program (No. R31-2008-000-10071-0) funded by the Ministry of Education, Science and Technology (Korea).


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Copyright information

© Springer-Verlag Berlin Heidelberg 2013

Authors and Affiliations

  • Yuanping Sun
    • 1
  • Hongying Guo
    • 1
  • Lihua Jin
    • 2
  • Yong-Hoon Cho
    • 2
  • E.-K. Suh
    • 3
  • H. J. Lee
    • 3
  • R. J. Choi
    • 4
  • Y. B. Hahn
    • 4
  1. 1.Institute of Science and Technology for Opto-Electronic InformationYantai UniversityYantaiChina
  2. 2.Department of Physics and Graduate School of Nanoscience and Technology (WCU)Korea Advanced Institute of Science and Technology (KAIST)DaejeonRepublic of Korea
  3. 3.Department of Semiconductor Science and Technology and Semiconductor Physics Research CenterChonbuk National UniversityChonjuKorea
  4. 4.School of Chemical EngineeringChonbuk National UniversityChonjuKorea

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