Stable MHz-repetition-rate passively Q-switched microchip laser frequency doubled by MgO:PPLN
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We present an Nd3+:YVO4 microchip laser that is passively Q-switched by a semiconductor saturable absorber mirror. The system generates 520 ps pulses at 1064 nm with 340 mW average output power at up to 2.3 MHz repetition rate. Single longitudinal and transverse mode operation with a peak-to-peak timing jitter less than 1 % is achieved. We discuss the influence of different setup parameters by using numerical simulations of the coupled rate equations and FEM simulations of the thermal management. The infrared light was frequency doubled in an MgO:PPLN crystal with up to 75 % conversion efficiency, which to our knowledge is the highest conversion efficiency that was ever achieved with passively Q-switched microchip lasers.
KeywordsPump Power Second Harmonic Generation Thermal Lens Finite Element Method Simulation Microchip Laser
We acknowledge Jochen Bönig and Andreas Dietz for performing the FEM simulations. This research project is financially supported by the German Federal Ministry of Education and Research (No.: 17 N 43 08).
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