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Increased spatial homogeneity in a light-emitting InGaN thin film using optical near-field desorption

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Abstract

We report a self-assembly method that produces greater spatial uniformity in InGaN thin films using optical near-field desorption. Spatial homogeneity in the In fraction was reduced by introducing additional light during the photo-enhanced chemical vapor deposition of InGaN. Near-field desorption of InGaN nanoparticles, upon addition depended on the In content of the film, and the photon energy of the illumination source determined the energy of the emitted photons. Since this deposition method is based on a photo-desorption reaction, it can easily be applied to other deposition techniques and used with other semiconductor systems.

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Authors and Affiliations

  1. School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan

    T. Yatsui, S. Yamazaki, T. Kawazoe & M. Ohtsu

  2. Nanophotonic Research Center, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan

    T. Yatsui, T. Kawazoe & M. Ohtsu

  3. Central Research and Development Centre, Nitto Optical Co., Ltd., Senboku-gun, Akita, 019-140, Japan

    K. Ito & H. Kawamura

  4. Research and Development Department, V-Technology Co., Ltd., Yokohama, Kanagawa, 240-0005, Japan

    M. Mizumura

Authors
  1. T. Yatsui
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  2. S. Yamazaki
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  3. K. Ito
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  4. H. Kawamura
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  5. M. Mizumura
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  6. T. Kawazoe
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  7. M. Ohtsu
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Correspondence to T. Yatsui.

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Yatsui, T., Yamazaki, S., Ito, K. et al. Increased spatial homogeneity in a light-emitting InGaN thin film using optical near-field desorption. Appl. Phys. B 97, 375–378 (2009). https://doi.org/10.1007/s00340-009-3757-8

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  • DOI: https://doi.org/10.1007/s00340-009-3757-8

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