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Visible cw laser emission of GaN-diode pumped Pr:YAlO3 crystal

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Abstract

In the present work we report on spectroscopic properties and laser results of GaN laser diode pumped Pr:YAlO3 crystal at room temperature. The polarization-resolved absorption and emission spectra have been recorded and the decay time of the 3 P 0 manifold has been measured. Three samples with different Pr3+-ion concentrations in YAP matrix have been tested and compared. The best results were achieved for 0.6 at. % Pr3+-ion doping: an output power of 91 mW at 746.9-nm wavelength with a maximum slope efficiency of 45% with respect to the absorbed power.

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Authors and Affiliations

  1. Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague, Břehová 7, 115 19, Prague 1, Czech Republic

    M. Fibrich, H. Jelínková & J. Šulc

  2. Crytur Ltd., Palackeho 175, 51101, Turnov, Czech Republic

    K. Nejezchleb & V. Škoda

Authors
  1. M. Fibrich
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  2. H. Jelínková
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  3. J. Šulc
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  4. K. Nejezchleb
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  5. V. Škoda
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Correspondence to M. Fibrich.

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Fibrich, M., Jelínková, H., Šulc, J. et al. Visible cw laser emission of GaN-diode pumped Pr:YAlO3 crystal. Appl. Phys. B 97, 363–367 (2009). https://doi.org/10.1007/s00340-009-3679-5

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  • DOI: https://doi.org/10.1007/s00340-009-3679-5

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