Abstract
In a novel approach to “thresholdless” lasers, we have developed a new growth technique for self-assembled deep centers in the technologically important semiconductor gallium-arsenide. Here we demonstrate the first gallium-arsenide deep-center laser. These lasers, which intentionally utilize gallium-arsenide deep-center transitions, exhibit a threshold of less than 2 A/cm2 in continuous-wave mode at room temperature at the important 1.54 μm fiber-optic wavelength. This threshold is much lower than for bandgap transitions in conventional bulk semiconductors. It is significant that this first demonstration of broad-area laser action was accomplished with electrical injection, and not merely optical pumping, as is usual for a new material.
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H.G. Park, S.H. Kim, S.H. Kwon, Y.G. Ju, J.K. Yang, J.H. Baek, S.B. Kim, Y.H. Lee, Science 305, 1444 (2004)
G.P. Agrawal, N.K. Dutta, Long-Wavelength Semiconductor Lasers (Reinhold, New York, 1986)
S. Reitzenstein, A. Bazhenov, A. Gorbunov, C. Hofmann, S. Muench, A. Loeffler, M. Kamp, J.P. Reithmaier, V.D. Kulakovskii, A. Forchel, Appl. Phys. Lett. 89, 051107 (2006)
K.J. Luo, J.Y. Xu, H. Cao, Y. Ma, S.H. Chang, S.T. Ho, G.S. Solomon, Appl. Phys. Lett. 78, 3397 (2001)
M. Gupta, J.L. Pan, J. Appl. Phys. (2009, in review)
J.L. Pan, J.E. McManis, M. Gupta, M.P. Young, J.M. Woodall, Appl. Phys. A 90, 105 (2008)
E.W. Williams, Phys. Rev. 168, 922 (1968)
H. Lei, H.S. Leipner, V. Bondarenko, J. Schreiber, J. Phys., Condens. Matter 16, S279 (2004)
M. Tajima, R. Toba, N. Ishida, M. Warashina, Mater. Sci. Tech. 13, 949 (1997)
M.A. Reshchikov, A.A. Gutkin, V.E. Sedov, Mater. Sci. Forum 196–201, 237 (1995)
M. Suezawa, A. Kasuya, Y. Nishina, K. Sumino, J. Appl. Phys. 69, 1618 (1991)
J.K. Kung, W.G. Spitzer, J. Appl. Phys. 45, 4477 (1974)
S.Y. Chiang, G.L. Pearson, J. Lumin. 10, 313 (1975)
T. Sauncy, C.P. Palsule, M. Holtz, S. Gangopadhyay, S. Massie, Phys. Rev. B 53, 1900 (1996)
M. Suezawa, A. Kasuya, Y. Nishina, K. Sumino, J. Appl. Phys. 76, 1164 (1994)
Ph. Ebert, Current Opin. Solid State Mater. Sci. 5, 211 (2001)
J. Gebauer, M. Lausmann, T.E.M. Staab, R. Krause-Rehberg, M. Hakala, M.J. Puska, Phys. Rev. B 60, 1464 (1999)
C. Domke, Ph. Ebert, K. Urban, Phys. Rev. B 57, 4482 (1998)
C. Domke, Ph. Ebert, M. Heinrich, K. Urban, Phys. Rev. B 54, 10288 (1996)
J. Gebauer, R. Krause-Rehberg, C. Domke, Ph. Ebert, K. Urban, Phys. Rev. Lett. 78, 3334 (1997)
F.M. Vorobkalo, K.D. Glinchuk, A.V. Prokhorovich, G. John, Phys. Stat. Sol. (a) 15, 287 (1973)
F.M. Vorobkalo, K.D. Glinchuk, A.V. Prokhorovich, Phys. Stat. Sol. (a) 7, 135 (1971)
A.E. Siegman, Lasers (University Science Books, Mill Valley, 1986)
Y. Yamamoto, R.E. Slusher, Phys. Today 46, 66 (1993)
N.B. Rex, R.K. Chang, L.J. Guido, IEEE Photonics Technol. Lett. 13, 1 (2001)
S. Chang, N.B. Rex, R.K. Chang, G. Chong, L.J. Guido, Appl. Phys. Lett. 75, 166 (1999)
S. Ates, S.M. Ulrich, P. Michler, S. Reitzenstein, A. Loeffler, A. Forchel, Appl. Phys. Lett. 90, 161111 (2007)
H.S. Djie, B.S. Ooi, X.-M. Fang, Y. Wu, J.M. Fastenau, W.K. Liu, Opt. Lett. 32, 44 (2007)
C.L. Tan, Y. Wang, H.S. Djie, B.S. Ooi, Appl. Phys. Lett. 91, 061117 (2007)
A. Markus, J.X. Chen, C. Paranthoen, A. Fiore, C. Platz, O. Gauthier-Lafaye, Appl. Phys. Lett. 82, 1818 (2003)