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Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas

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Abstract

We investigate the characteristics of terahertz radiation pulses using biased multi-energy arsenic-ion-implanted and semi-insulating GaAs photoconductive antennas with different gap sizes in terahertz time-domain spectroscopy. At a specific fluence excitation, with increasing antenna gap size, the absolute values of the (peak) normalized terahertz waveform minimum (valley), as well as the bandwidth, reveal an increasing trend for multi-energy arsenic-ion-implanted GaAs antennas and a decreasing trend for semi-insulating GaAs antennas. We find that the largest reachable bias fields applied to arsenic-ion-implanted GaAs antennas are higher than those applied to semi-insulating GaAs antennas. On the basis of pump fluence dependences of peak terahertz amplitude, we deduce that multi-energy arsenic-ion-implanted GaAs antennas have the ability to acquire higher THz power at even higher pump fluence in comparison with semi-insulating GaAs antennas.

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References

  1. H.M. Pickett, J. Mol. Spectrosc. 148, 371 (1991)

    Article  ADS  Google Scholar 

  2. T.R. Globus, D.L. Woolard, T. Khromova, T.W. Crowe, M. Bykhovskaia, B.L. Gelmont, Hesler, A.C. Samuels, J. Biol. Phys. 29, 89 (2003)

    Article  Google Scholar 

  3. D.M. Mittleman, M. Gupta, R. Neelamani, R. Baraniuk, J.V. Rudd, M. Koch, Appl. Phys. B: Photophys. Laser Chem. 68, 1085 (1999)

    Article  ADS  Google Scholar 

  4. T.-A. Liu, G.-R. Lin, Y.-C. Chang, C.-L. Pan, Opt. Express 13, 10416 (2005)

    Article  ADS  Google Scholar 

  5. T. Hattori, K. Tukamoto, H. Nakatsuka, Jpn. J. Appl. Phys. 40, 4907 (2001)

    Article  ADS  Google Scholar 

  6. M.S. Markram-Ebied, in Semi-insulating III–V Materials, ed. by D.C. Look, J.S. Blakemore (Shiva, Nantwich, 1984)

    Google Scholar 

  7. F.W. Smith, H.Q. Le, V. Diaduk, M.A. Hollis, A.R. Calawa, S. Gupta, M. Frankel, D.R. Dykaar, G.A. Mourou, T.Y. Hsiang, Appl. Phys. Lett. 54, 890 (1989)

    Article  ADS  Google Scholar 

  8. M. Tani, S. Matsuura, K. Sakai, S. Nakashima, Appl. Opt. 36, 7853 (1997)

    Article  ADS  Google Scholar 

  9. K.G. Eyink, M.A. Capano, S.D. Walck, T.W. Haas, B.G. Streetman, J. Electron. Mater. 26, 391 (1997)

    Article  ADS  Google Scholar 

  10. A. Hussain, S.R. Andrews, Appl. Phys. Lett. 88, 143514 (2006)

    Article  ADS  Google Scholar 

  11. J. Lloyd-Hughes, E. Castro-Camus, M.D. Fraser, C. Jagadish, M.B. Johnston, Phys. Rev. B 70, 235330 (2004)

    Article  ADS  Google Scholar 

  12. T.-A. Liu, M. Tani, C.-L. Pan, J. Appl. Phys. 93, 2996 (2003)

    Article  ADS  Google Scholar 

  13. T.-A. Liu, G.-R. Lin, Y.-C. Lee, S.-C. Wang, M. Tani, H.-H. Wu, C.-L. Pan, J. Appl. Phys. 98, 013711 (2005)

    Article  ADS  Google Scholar 

  14. J.T. Darrow, X.-C. Zhang, D.H. Auston, Appl. Phys. Lett. 58, 25 (1990)

    Article  ADS  Google Scholar 

  15. J.T. Darrow, X.-C. Zhang, D.H. Auston, J.D. Morse, IEEE J. Quantum Electron. 28, 1607 (1992)

    Article  ADS  Google Scholar 

  16. P.K. Benicewicz, A.J. Taylor, Opt. Lett. 18, 1332 (1993)

    Article  ADS  Google Scholar 

  17. P.K. Benicewicz, J.P. Roberts, A.J. Taylor, J. Opt. Soc. Am. B 11, 2533 (1994)

    Article  ADS  Google Scholar 

  18. S.E. Ralph, D. Grischkowsky, Appl. Phys. Lett. 59, 1972 (1991)

    Article  ADS  Google Scholar 

  19. Q. Wu, X.-C. Zhang, Appl. Phys. Lett. 67, 3523 (1995)

    Article  ADS  Google Scholar 

  20. N. Katzenellenbogen, D. Grischkowsky, Appl. Phys. Lett. 58, 222 (1991)

    Article  ADS  Google Scholar 

  21. R.-H. Chou, T.-A. Liu, C.-L. Pan, J. Appl. Phys. 104, 053121 (2008)

    Article  ADS  Google Scholar 

  22. R.-H. Chou, T.-A. Liu, C.-L. Pan, Jpn. J. Appl. Phys. 47, 8419 (2008)

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Center for Measurement Standards, Industrial Technology Research Institute, 321, Sec. 2, Kuang Fu Road, Hsinchu, 300, Taiwan

    T.-A. Liu

  2. Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu, 300, Taiwan

    R.-H. Chou & C.-L. Pan

Authors
  1. T.-A. Liu
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  2. R.-H. Chou
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  3. C.-L. Pan
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Correspondence to T.-A. Liu.

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Liu, TA., Chou, RH. & Pan, CL. Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas. Appl. Phys. B 95, 739–744 (2009). https://doi.org/10.1007/s00340-008-3332-8

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  • DOI: https://doi.org/10.1007/s00340-008-3332-8

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