Abstract
Optical injection of electrons from CdSe nanocrystals into amorphous semiconductors can be used to optically control the electron density in trap-rich conduction bands. For the specific example of polycrystalline C60, we show that important parameters of the density of trap states below the mobility edge can be retrieved.
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Biebersdorf, A., Dietmüller, R., Ohlinger, A. et al. Photodoping with CdSe nanocrystals as a tool to probe trap-state distributions in C60 crystals. Appl. Phys. B 93, 239–243 (2008). https://doi.org/10.1007/s00340-008-3143-y
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DOI: https://doi.org/10.1007/s00340-008-3143-y