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Enhancement of the far-field output power and the properties of the very-small-aperture lasers

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Abstract

We report on a VSAL structure fabricated by a 650 nm edge emitting laser diode with an Au-coated facet and an aperture size of 250 × 500 nm. The far field output power can maintain at 1 mW and the power density is 7.5 mW/μm2. Some properties of the VSAL including the threshold current change, the red-shift of the spectral position, and the strong relative-intensity-noise are presented. The physical mechanisms responsible for these phenomena are also discussed, which may contribute to the understanding and application of the potential device for near-field optics.

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Gan, Q., Song, G., Xu, Y. et al. Enhancement of the far-field output power and the properties of the very-small-aperture lasers. Appl. Phys. B 81, 503–506 (2005). https://doi.org/10.1007/s00340-005-1908-0

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  • DOI: https://doi.org/10.1007/s00340-005-1908-0

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