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Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

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Abstract

This work studies the effect of a double barrier on the photoresponse spectrum of SiGe/Si heterojunction internal photoemission infrared photodetectors. Results are compared with those of a single barrier sample which has nominally the same parameters. It is shown that the cut-off wavelength of the multi-barrier device depends on the operating temperature; therefore, it can be tuned to the desired region within the device capacity by changing the device temperature. The proof of concept device, which has two Si1-xGex/Si junctions with x=0.1 and x=0.23, allows the tuning of the cut-off wavelength from 19.9 μm to 11.7 μm for 10 K and 50 K, respectively.

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Authors and Affiliations

  1. Physics Department, Middle East Technical University, 06531, Ankara, Turkey

    B. Aslan & R. Turan

  2. Institute for Microstructural Sciences, National Research Council, K1A 0R6, Ottawa, Canada

    B. Aslan, H.C. Liu, J.M. Baribeau, M. Buchanan & P. Chow-Chong

Authors
  1. B. Aslan
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  2. R. Turan
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  3. H.C. Liu
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  4. J.M. Baribeau
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  5. M. Buchanan
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  6. P. Chow-Chong
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Correspondence to B. Aslan.

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PACS

85.60.Gz; 79.60.-i; 78.66.-w

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Aslan, B., Turan, R., Liu, H. et al. Double-barrier long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors. Appl Phys B 78, 225–228 (2004). https://doi.org/10.1007/s00340-003-1343-z

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  • DOI: https://doi.org/10.1007/s00340-003-1343-z

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