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Property study of Si +-ion-implanted Nd:YVO 4 waveguides

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Abstract.

Planar waveguides were formed in Nd:YVO4 crystals by 3.0-MeV Si+-ion implantation at doses of 1×1013–1.5×1015 ions/cm2 at room temperature. The effective refractive indices of the waveguide propagation modes were measured by using a prism-coupling method. It was found that the number of the propagation modes is dependent on the doses for the waveguides in Nd:YVO4. The atom displacement in the near-surface region (about 2 μm beneath the surface) of the Nd:YVO4 crystal induced by the implantation was simulated by using the TRIM 98 (transport and range of ions in matter) code. The possible reasons for the waveguide formation are discussed in a primary way.

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Authors and Affiliations

  1. Department of Physics, Shandong University, Jinan 250100, Shandong, P.R. China, , , , , , CN

    F. Chen, X.-L. Wang, G. Fu, S.-L. Li & K.-M. Wang

  2. School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, Shandong, P.R. China, , , , , , CN

    Q.-M. Lu

  3. Department of Technical Physics & The Key Laboratory of Heavy Ion Physics, Ministry of Education, Peking University, Beijing 100871, P.R. China, , , , , , CN

    D.-Y. Shen & R. Nie

Authors
  1. F. Chen
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  2. X.-L. Wang
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  3. Q.-M. Lu
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  4. G. Fu
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  5. S.-L. Li
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  6. K.-M. Wang
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  7. D.-Y. Shen
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  8. R. Nie
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Additional information

Received: 17 July 2002 / Revised version: 20 September 2002 / Published online: 11 December 2002

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ID="*"Corresponding author. Fax: +86-531-8565167, E-mail: drfchen@sdu.edu.cn

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Chen, F., Wang, XL., Lu, QM. et al. Property study of Si +-ion-implanted Nd:YVO 4 waveguides . Appl Phys B 75, 895–897 (2002). https://doi.org/10.1007/s00340-002-1057-7

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  • DOI: https://doi.org/10.1007/s00340-002-1057-7

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