Skip to main content
SpringerLink
Log in

Amplified luminescence and threshold current temperature dependencies of ZnSe and GaN laser diodes

  • Published:
Applied Physics B Aims and scope Submit manuscript

Abstract.

Using a transfer equation approach, it is shown that the cavity-trapped amplified luminescence (AL) flux densities S integrated over the frequency and cavity length at the threshold of ZnSe, zinc-blende and wurtzite GaN laser diodes (LDs) with stripe-geometry bulk active layers reach (3.5–9)×104 MW/m2 within the temperature range 200–400 K. At these values of S, the nonlinear optical effects induced by AL can be observed. The AL induced recombination can enhance the threshold current density of the short wavelength LDs by two or even three times.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

  1. Belarus State University, F. Skaryna Ave. 4, 220050 Minsk, Belarus, BY

    L.I. Burov & I.N. Waraxe

  2. B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, F. Skaryna Ave. 68, 220072 Minsk, Belarus, BY

    G.I. Ryabtsev

  3. Brest State Technical University, Moskovskaya Str. 267, 224017 Brest, Belarus, BY

    A.S. Smal

Authors
  1. L.I. Burov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G.I. Ryabtsev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A.S. Smal
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. I.N. Waraxe
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Received: 7 January 2002 / Revised version: 11 April 2002 / Published online: 8 August 2002

Rights and permissions

Reprints and permissions

About this article

Cite this article

Burov, L., Ryabtsev, G., Smal, A. et al. Amplified luminescence and threshold current temperature dependencies of ZnSe and GaN laser diodes. Appl Phys B 75, 63–66 (2002). https://doi.org/10.1007/s00340-002-0930-8

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00340-002-0930-8

Search

Navigation