Abstract.
The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrödinger’s and Poisson’s equations. Considering the piezoelectric effect, the two-dimensional electron gas concentration is calculated to be as high as 7.7×1019 cm-3. In order to obtain an understanding of how the two-dimensional electron gas distribution is influenced by dopants in GaN, we observed the two-dimensional electron gas concentration and occupation of sub-bands versus dopant concentration in the GaN layer of an AlGaN/GaN heterostructure. Our results show that the two-dimensional electron gas concentration is slightly increased at higher doping levels in GaN, while the quantum confinement in the AlGaN/GaN heterostructure is weakened with the increase of donor concentration in the GaN layer.
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Received: 26 May 2001 / Accepted: 23 July 2001 / Published online: 23 January 2002
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Chu, R., Zheng, Y., Zhou, Y. et al. Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors . Appl Phys A 75, 387–389 (2002). https://doi.org/10.1007/s003390100978
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DOI: https://doi.org/10.1007/s003390100978