Abstract
Optically active thin films on Si substrates have been produced by laser ablation of a Nd-doped potassium gadolinium tungstate (Nd:KGW) single crystal. Films grown at low oxygen pressures (<0.6 mbar) are potassium-deficient and appear to be mainly disordered. They show a poor photoluminescence (PL) performance that improves upon annealing in air at temperatures in the range 700–1000 °C. Films grown at high oxygen pressure (1 mbar) show instead good stoichiometry and the presence of a dominant textured gadolinium-tungstate phase compared to KGW. These films have low absorption, a refractive index close to that of bulk KGW and good PL performance, the emission lifetimes being longer (τ>150 μs) under certain conditions than those measured in the single-crystal material.
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Received: 25 July 2001 / Accepted: 26 July 2001 / Published online: 17 October 2001
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Atanasov, P., Perea, A., Jiménez de Castro, M. et al. Luminescence properties of thin films prepared by laser ablation of Nd-doped potassium gadolinium tungstate. Appl Phys A 74, 109–113 (2002). https://doi.org/10.1007/s003390100975
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DOI: https://doi.org/10.1007/s003390100975