Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films

Abstract.

Amorphous/crystalline mixed La0.5Sr0.5MnO3 (LSMO) thin films on quartz wafers are prepared at different depositing temperatures using laser ablation and their low-field magnetoresistive property is investigated. It is argued that the insulating amorphous layers separating the magnetic microcrystalline grains may act as the barriers for electron tunneling. The rapid decay of magnetoresistance with increasing temperature is explained by the spin-polarized inter-grain tunneling. Given the spin-polarized inter-grain tunneling as the probable mechanism, it is believed that the spin flip during inter-grain tunneling reaches a minimum at the optimized depositing temperature of 600 °C and consequently the maximal low-field magnetoresistance is obtained.

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Received: 7 September 2000 / Accepted: 19 December 2000 / Published online: 23 March 2001

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Liu, JM., Yuan, G., Chen, X. et al. Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La0.5Sr0.5MnO3 thin films. Appl Phys A 73, 625–630 (2001). https://doi.org/10.1007/s003390100823

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  • PACS: 75.50.Cn; 72.60.Tg; 73.50.Jt