Abstract.
The growth-front interface of a diamond single crystal, which was grown from the Fe-Ni-C system under high pressure and high temperature (HPHT), has been directly observed by transmission electron microscopy (TEM) for the first time. The presence of a cellular interface suggests that the diamond is grown from solution and there exists a narrow supercooling zone in front of the solid–liquid interface. Diamond-growth parallel layers were also found, which indicates that the diamond grows from solution layer by layer. It provides direct evidence that the diamond is synthesized through graphite dissolution and transformation to subcritical diamond particles in a molten catalyst, diamond subcritical particle connection to form diamond clusters, diffusion of the diamond clusters to the growing diamond, and unification of the diamond clusters on the growing diamond crystal.
Similar content being viewed by others
Author information
Authors and Affiliations
Additional information
Received: 17 July 2000 / Accepted: 27 October 2000 / Published online: 10 January 2001
Rights and permissions
About this article
Cite this article
Yin, L., Li, M., Zou, Z. et al. Characterization of a growth-front interface in a HPHT-grown diamond crystal by transmission electron microscopy . Appl Phys A 72, 373–375 (2001). https://doi.org/10.1007/s003390100743
Issue Date:
DOI: https://doi.org/10.1007/s003390100743