Micro-Raman facet temperatures of high-power diode lasers with different waveguide architectures are compared. For regular operation conditions, the thermal behavior of ‘unaged’ arrays emitting in the 808-nm wavelength region with different architectures is similar, however, with an increased load thermal behaviors differ significantly and exhibit failure events at facet temperatures typically between 150 and 450 °C. From various experiments, among them facet temperature measurements for ultrahigh-power operation as well as by preparative failure analytics, we provide evidence that in arrays the front facets are significantly affected by device operation and influence the failure behavior of the whole high-power diode laser also in cases when the device failure is accompanied by dislocation creation inside the device.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Price includes VAT (USA)
Tax calculation will be finalised during checkout.
Received: 3 October 1999 / Accepted: 9 November 1999 / Published online: 8 March 2000
About this article
Cite this article
Tomm, J., Thamm, E., Bärwolff, A. et al. Facet degradation of high-power diode laser arrays. Appl Phys A 70, 377–381 (2000). https://doi.org/10.1007/s003390051051
- PACS: 42.55.P; 68.60.D; 78.30.F