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Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures

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Abstract.

The 3D islands of the Stranski–Krastanow system Ge/Si(001) that form either during the annealing of previously flat and nearly strain-relieved Ge films at 1020 K or directly at the Ge deposition at 1020 K are found to be composed of a mixture of Ge and Si, thus pointing to considerable interdiffusion at 1020 K. Direct measurement of the elastic energy unambiguously reveals that neither the 3D islanding nor the Si in-diffusion are driven by the reduction of misfit strain; this strain being the result of increasing configurational entropy.

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Authors and Affiliations

  1. Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany, , , , , , DE

    J. Walz & R. Koch

  2. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany, , , , , , DE

    T. Hesjedal & E. Chilla

Authors
  1. J. Walz
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  2. T. Hesjedal
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  3. E. Chilla
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  4. R. Koch
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Received: 28 May 1999 / Accepted: 13 July 1999 / Published online: 8 September 1999

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Walz, J., Hesjedal, T., Chilla, E. et al. Si in-diffusion during the 3D islanding of Ge/Si(001) at high temperatures. Appl Phys A 69, 467–470 (1999). https://doi.org/10.1007/s003390051035

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  • DOI: https://doi.org/10.1007/s003390051035

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