Abstract.
Ferroelectric SrBi2Ta2O9 (SBT) films were grown by pulsed-laser deposition (PLD) at different substrate temperatures and fluences. A correlation between film structure and ferroelectric properties is established. The dielectric function ε′ of thin SBT films shows a Curie–Weiss behavior well below the peak temperature Tmax and relaxor-like behavior in the vicinity of Tmax. Domain walls have a strong influence on the dielectric and ferroelectric properties and on the polarization fatigue of SBT films below 100 °C. The formation of ferroelectric phases is favored at lower substrate temperatures by incorporating Bi2O3 template layers into the structure.
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Received: 18 March 1999 / Accepted: 19 March 1999 / Published online: 5 May 1999
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Dinu, R., Dinescu, M., Pedarnig, J. et al. Film structure and ferroelectric properties of in situ grown SrBi2Ta2O9 films . Appl Phys A 69, 55–61 (1999). https://doi.org/10.1007/s003390050971
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DOI: https://doi.org/10.1007/s003390050971