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Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy

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Abstract.

Near-surface vacancy-type defects have been studied by positron beam spectroscopy in three boron-doped Si wafers; a control sample, second sample exposed to atomic hydrogen in electron cyclotron resonance (ECR) plasma, and a third sample annealed at 500 °C following plasma treatment. From the analysis of the Doppler broadening spectra, measured as a function of positron implantation depth, we obtain positron diffusion lengths of about 100 and 250 nm for the damaged layer and bulk of the wafer, respectively. For the plasma-treated wafer, our measurements provide a defect density of about 5×1017 cm-3.

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Authors and Affiliations

  1. Department of Physics, Box 19059, The University of Texas at Arlington, Arlington, TX 76019, USA, , , , , , US

    C.E. Gonzalez & S.C. Sharma

  2. National Semiconductor, Arlington, Texas 76017, USA, , , , , , US

    N. Hozhabri

  3. Department of Engineering Science and Mechanics, Electronic Materials and Processing Research Laboratory, Pennsylvania State University, University Park, Pennsylvania, PA 16802, USA, , , , , , US

    D.Z. Chi & S. Ashok

Authors
  1. C.E. Gonzalez
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  2. S.C. Sharma
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  3. N. Hozhabri
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  4. D.Z. Chi
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  5. S. Ashok
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Received: 4 September 1998 / Accepted: 5 January 1999 / Published online: 28 April 1999

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Gonzalez, C., Sharma, S., Hozhabri, N. et al. Near-surface defects in hydrogen-plasma-treated boron-doped silicon studied by positron beam spectroscopy . Appl Phys A 68, 643–645 (1999). https://doi.org/10.1007/s003390050954

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  • DOI: https://doi.org/10.1007/s003390050954

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