In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs

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 cm^-3 and above) induce oscillations in the reflected intensity.

The evolution of the layers morphology is shown to depend on two effects: (i)the locally high surface concentration of carbon which blocks locally the growth and hence induces holes at the surface, (ii)the occurrence of dislocations at thicknesses larger than the critical thickness which are revealed chlorides produced by the decomposition of CCl₄ (the carbon precursor) and form deep etch pits.