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A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon

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 /cm3. After this new ECD treatment, PS:Er was found to emit much more intense room-temperature visible photoluminescence than both the porous silicon control and the PS:Er prepared by constant-current ECD. Room-temperature IR photoluminescence around 1.54 μm was observed for the first time without any post-doping annealing.

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Authors and Affiliations

  1. School of Chemistry and Chemical Engineering, Zhongshan University, Guangzhou 510275, China (Fax: +86-20/8418-9173, E-mail: cesgml@zsu.edu.cn), , , , , , CN

    M.L. Gong & J.X. Shi

  2. Department of Chemistry, Hong Kong Baptist University, Hong Kong, China (Fax: +852/2339-7348, E-mail: wkwong@sc11.sci.hkbu.edu.hk), , , , , , CN

    W.K. Wong & K.K. Shiu

  3. Department of Physics, Hong Kong Baptist University, Hong Kong, China (Fax: +852/2304-6558, E-mail: kwcheah@hkbu.edu.hk), , , , , , CN

    W.H. Zheng & K.W. Cheah

Authors
  1. M.L. Gong
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  2. J.X. Shi
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  3. W.K. Wong
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  4. K.K. Shiu
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  5. W.H. Zheng
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  6. K.W. Cheah
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Received: 3 September 1998/Accepted: 9 September 1998

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Gong, M., Shi, J., Wong, W. et al. A novel electrochemical approach for fabrication of photoluminescent erbium-doped porous silicon . Appl Phys A 68, 107–110 (1999). https://doi.org/10.1007/s003390050862

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  • DOI: https://doi.org/10.1007/s003390050862

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