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Pulsed laser deposition of ZnO as conductive buffer layer of (001)-LiNbO3 thin films

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(LO) mode peak at 579 cm-1, indicating oxygen deficiency in the films. Significant dependence of the electrical property for the films on substrate temperature was shown. The I–V relation of the films exhibited non-ohmic behavior. Whereas the films deposited above 500 °C showed a metal-like property, at a lower substrate temperature semiconducting thin films were achieved. The (001)-oriented LiNbO3/ZnO heterostructure was successfully prepared on quartz fused and (001) sapphire plates.

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Authors and Affiliations

  1. Institute of Materials Research and Engineering, Science Drive 4, National University of Singapore, Lower Kent Ridge Road, Singapore 119260 (E-mail: liu-jm@imre.org.sg), , , , , , SG

    J.-M. Liu

  2. Department of Physics, Faculty of Science, National University of Singapore, Lower Kent Ridge Road, Singapore 119260, , , , , , SG

    C.K. Ong

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  1. J.-M. Liu
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  2. C.K. Ong
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Received: 6 April 1998/Accepted: 26 May 1998

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Liu, JM., Ong, C. Pulsed laser deposition of ZnO as conductive buffer layer of (001)-LiNbO3 thin films . Appl Phys A 67, 493–497 (1998). https://doi.org/10.1007/s003390050809

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  • DOI: https://doi.org/10.1007/s003390050809

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