Skip to main content
SpringerLink
Log in

Reflection high-energy electron diffraction real-time monitoring of an etch process implemented in molecular beam epitaxy technology: hydrogen chloride versus GaAs(001) epilayers

  • Regular paper
  • Published:
Applied Physics A Aims and scope Submit manuscript

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

  1. NTT Basic Research Laboratories, 3-1 Morinosato-Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan, , , , , , JP

    A. Hamoudi, T. Sogawa, T. Saitoh & J. Yumoto

Authors
  1. A. Hamoudi
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. T. Sogawa
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. T. Saitoh
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J. Yumoto
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Received: 13 November 1997/Accepted: 19 January 1998

Rights and permissions

Reprints and permissions

About this article

Cite this article

Hamoudi, A., Sogawa, T., Saitoh, T. et al. Reflection high-energy electron diffraction real-time monitoring of an etch process implemented in molecular beam epitaxy technology: hydrogen chloride versus GaAs(001) epilayers . Appl Phys A 67, 357–359 (1998). https://doi.org/10.1007/s003390050784

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s003390050784

Search

Navigation