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Cylindrical spike model for the formation of diamondlike thin films by ion deposition

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T

/nS of nT rearrangements and nS atoms in the spike volume as the crucial parameter characterizing the ability of a given ion–target combination to achieve complete rearrangement of the spike volume. nT/nS>1 is the optimum condition for diamondlike film growth. For aC films the ion energy dependence of nT/nS agrees well with the measured sp3 bond fraction. For Ar+-ion-assisted deposition of aC we find nT/nS>1 above 50 eV with no pronounced ion energy dependence. Furthermore, our model predicts optimum conditions for the formation of cubic boron nitride between 50 eV and 3 keV.

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Authors and Affiliations

  1. Fakultät für Physik, Universität Konstanz, D-78457 Konstanz, Germany (Fax: +49-7531/88-3090, E-mail: hans.hofsaess@uni-konstanz.de), , , , , , DE

    H. Hofsäss, H. Feldermann, R. Merk, M. Sebastian & C. Ronning

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  1. H. Hofsäss
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  2. H. Feldermann
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  3. R. Merk
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  4. M. Sebastian
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  5. C. Ronning
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Accepted: 14 October 1997

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Hofsäss, H., Feldermann, H., Merk, R. et al. Cylindrical spike model for the formation of diamondlike thin films by ion deposition . Appl Phys A 66, 153–181 (1998). https://doi.org/10.1007/s003390050652

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  • DOI: https://doi.org/10.1007/s003390050652

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