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Low-temperature photoluminescence in SiGe single quantum wells

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Gex single quantum wells (x=0.19) grown by rapid thermal chemical vapor deposition at 625 °C. A well-resolved strong excitonic luminescence with TO-phonon and no-phonon transitions with a full width at half-maximum as low as 6 meV is observed for a quantum well of 98 Å. The photoluminescence emission shows a significant blue shift and a broadening with excitation intensity. The results are analysed in terms of localization of photoinduced charge carriers at the heterointerfaces.

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Authors and Affiliations

  1. TUBITAK, Marmara Research Center, Institute of Electronics, P.O. Box 21, Gebze, TR-41470 Kocaeli, Turkey (Fax: 90-262/641-2309, E-mail: kalem@mam.gov.tr), , , , , , TR

    S. Kalem

  2. University of Illinois at Urbana-Champaign, Center for Compound Semiconductor Microelectronics, Department of Electronics and Computer Engineering, Urbana, Illinois 61801, USA (Fax: +1-217/244-6375, E-mail: gstill@ux1.cso.uiuc.edu), , , , , , US

    T. Curtis & G.E. Stillman

  3. Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands (Fax: +31-40/274-3390, E-mail:deboer@prl.philips.nl), , , , , , NL

    W.B. de Boer

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  1. S. Kalem
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  2. T. Curtis
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  3. W.B. de Boer
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  4. G.E. Stillman
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Received: 11 September 1996/Accepted: 15 August 1997

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Kalem, S., Curtis, T., de Boer, W. et al. Low-temperature photoluminescence in SiGe single quantum wells . Appl Phys A 66, 23–28 (1998). https://doi.org/10.1007/s003390050632

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  • DOI: https://doi.org/10.1007/s003390050632

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