Skip to main content
Log in

Photoacoustic measurements of the thermal properties of AlyGa1-yAs alloys in the region 0<y<0.5

  • Published:
Applied Physics A Aims and scope Submit manuscript

y

Ga1-yAs alloys grown by liquid phase epitaxy on GaAs substrates, by means of the open photoacoustic cell detection technique and the temperature-rise method under continuous light illumination. The values of the thermal conductivity, diffusivity and specific heat were obtained in the 0<y<0.5 region, where the AlyGa1-yAs band gap is mainly direct. The technique presented here is based upon an effective sample model which is shown to be suitable for the determination of the thermal properties of two layer semiconductor specimens.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

Author information

Authors and Affiliations

Authors

Additional information

Received: 15 November 1996/Accepted: 5 March 1997

Rights and permissions

Reprints and permissions

About this article

Cite this article

Pichardo, J., Marín, E., Alvarado-Gil, J. et al. Photoacoustic measurements of the thermal properties of AlyGa1-yAs alloys in the region 0<y<0.5 . Appl Phys A 65, 69–72 (1997). https://doi.org/10.1007/s003390050544

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s003390050544

Navigation