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Characterization of GaAs/AlxGa1-xAs heterointerface defects by means of capacitive measurememts

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Ga1-xAs heterojunctions grown by liquid-phase epitaxy. Interface states with hiqh concentration, Nt=3×1011 cm-2 and energy level Ec-Et=0.14 eV distributed in a box 150 Å wide at the heterointerface and acting as electron traps are observed. The possible origin could be the isolated arsenic vacancy VAs in n-GaAs.

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  1. Sofia University, Department of Solid State Physics and Microelectronics, 5 J. Bourchier Blvd, 1126 Sofia, Bulgaria (E-mail: epv@phys.uni-sofia.bg), , , , , , BG

    E.P. Valcheva

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  1. E.P. Valcheva
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Received: 25 April 1996/Accepted: 22 January 1997

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Valcheva, E. Characterization of GaAs/AlxGa1-xAs heterointerface defects by means of capacitive measurememts . Appl Phys A 65, 39–42 (1997). https://doi.org/10.1007/s003390050538

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  • DOI: https://doi.org/10.1007/s003390050538

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