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Flatness improvement of InP using phosphine modulation metalorganic chemical vapor deposition

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Authors and Affiliations

  1. Department of Electrical Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan 80424, China (Fax:+07/525-4199), , , , , , TW

    M.K. Lee & C.C. Hu

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  1. M.K. Lee
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  2. C.C. Hu
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Received: 18 September 1996/Accepted: 4 December 1996

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Lee, M., Hu, C. Flatness improvement of InP using phosphine modulation metalorganic chemical vapor deposition . Appl Phys A 64, 589–592 (1997). https://doi.org/10.1007/s003390050521

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  • DOI: https://doi.org/10.1007/s003390050521

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