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Low contact resistance of n+-Si/Ti/WNx/Al submicron contact structures

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-Si/Ti/WNx/Al multi-layer metallization scheme. The contact resistance has been strongly related to the plasma nitridation of the Ti surface because the contact resistance of n+-Si/Ti/WNx/Al with contact size of 0.49 μm2 about 100–130 Ω, whereas without the nitridation of the Ti surface the contact resistance rises up to 200–390 Ω. 19F (p,αγ) nuclear resonance analysis and Auger electron spectroscopy reveal that F adatoms on the Ti surface are successfully removed by the 30 s nitridation and as a result, the low contact resistance can be achieved.

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Authors and Affiliations

  1. Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea , , , , , , KR

    Yong Tae Kim & Chang Woo Lee

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  1. Yong Tae Kim
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  2. Chang Woo Lee
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Received: 16 July 1996/Accepted: 5 November 1996

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Kim, Y., Lee, C. Low contact resistance of n+-Si/Ti/WNx/Al submicron contact structures . Appl Phys A 64, 497–499 (1997). https://doi.org/10.1007/s003390050508

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  • DOI: https://doi.org/10.1007/s003390050508

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