Abstract.
Incorporation of phosphorus into silicon from a spin-on dopant layer (SOD) at 400 °C is described.
Annealing experiments were carried out with SOD films deposited on (100) silicon substrates by using the spin-on technique. Conventional heating on a hotplate in normal atmosphere and a temperature range up to 400 °C was used to study the dopant incorporation. After removing the SOD-films one part of the silicon substrates was annealed at higher temperatures. Investigations were carried out by SIMS, SAM, XPS, HTEM, stripping Hall and Van der Pauw measurements before and after the high temperature annealing.
Chemical phosphorus concentration profiles obtained from low temperature annealed samples showed diffusion depths of 60–80 nm (extrapolated to a substrate doping level of 1016 cm-3) and surface concentrations of 1019–1020 cm-3. Electron concentration profiles exhibiting maximum values around 2⋅1019 cm-3 could be measured on high temperature annealed samples only.
Similar content being viewed by others
Author information
Authors and Affiliations
Additional information
Received: 28 March 1996/Accepted: 19 August 1996
Rights and permissions
About this article
Cite this article
Mohr, U., Leihkauf, R. & Jacob, K. Phosphorus distribution profiles in 100-silicon using a spin-on source at low temperatures. Appl Phys A 64, 77–81 (1996). https://doi.org/10.1007/s003390050447
Issue Date:
DOI: https://doi.org/10.1007/s003390050447