Abstract.
A highly (100)-oriented metallic LaNiO3 film was prepared directly on a Si substrate by a simple metalorganic decomposition (MOD) technique using lanthanum nitrate and nickel acetate as the starting sources. Subsequent Pb(Zr,Ti)O3 (PZT) thin films deposited on the LaNiO3-coated Si substrate were obtained by a modified sol–gel method. It was found that the PZT thin films began to form a single perovskite phase at a low annealing temperature of 530 °C, and exhibited highly (100) orientation. A ferroelectric capacitor of Pt/Pb(Zr,Ti)O3/LaNiO3/Si annealed at 600 °C displayed a good P-E hysteresis characteristic and was fatigue-free even after 1011 switching cycles.
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Received: 25 May 2000 / Accepted: 9 August 2000 / Published online: 30 November 2000
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Meng, X., Sun, J., Yu, J. et al. Enhanced fatigue property of PZT thin films using LaNiO3 thin layer as bottom electrode . Appl Phys A 73, 323–325 (2001). https://doi.org/10.1007/s003390000696
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DOI: https://doi.org/10.1007/s003390000696